Datasheet Details
| Part number | P4NB10 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 137.81 KB |
| Description | STP4NB10 |
| Datasheet | P4NB10_STMicroelectronics.pdf |
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Overview: .. ® STP4NB100 STP4NB100FP N - CHANNEL 1000V - 4Ω - 3.8A - TO-220/TO-220FP PowerMESH™ MOSFET TYPE ST P4NB100 ST P4NB100FP s s s s s V DSS 1000 V 1000 V R DS(on) < 4.4 Ω < 4.4 Ω ID 3.8 A 3.
| Part number | P4NB10 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 137.81 KB |
| Description | STP4NB10 |
| Datasheet | P4NB10_STMicroelectronics.pdf |
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|
|
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the pany’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID I DM ( • ) P tot dv/dt( 1) V ISO Ts tg Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (continuous) at Tc = 25 o C Drain Current (continuous) at Tc = 100 o C Drain Current (pulsed) T otal Dissipation at Tc = 25 o C Derating F actor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max.
| Part Number | Description |
|---|---|
| P4NB100 | STP4NB100 |
| P4NA40F1 | STP4NA40F1 |
| P4NA80 | STP4NA80 N-Channel MOS Transistor |
| P4NA80FI | STP4NA80FI |
| P4NC60 | STP4NC60 |
| P4NC60FP | STP4NC60FP |
| P4NK60ZFP | STP4NK60ZFP |