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STP5NB40 STP5NB40FP
N - CHANNEL ENHANCEMENT MODE PowerMESH™ MOSFET
PRELIMINARY DATA TYPE STP5NB40 STP5NB40FP
s s s s s
V DSS 400 V 400 V
R DS(on) < 1.8 Ω < 1.8 Ω
ID 4.7 A 3.1 A
TYPICAL RDS(on) = 1.47 Ω 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED EXTREMELY HIGH dv/dt CAPABILITY
2
3
2
3
1 1 DESCRIPTION Using the latest high voltage MESH OVERLAY™ TO-220 TO-220FP process, SGS-Thomson has designed an advanced family of Power MOSFETs with outstanding performance. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche INTERNAL SCHEMATIC DIAGRAM and dv/dt capabilities and unrivalled gate charge DataSheet4U.
P5NB40FP Datasheet
