Datasheet Details
| Part number | P5NC90 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 439.21 KB |
| Description | STP5NC90 |
| Datasheet | P5NC90_STMicroelectronics.pdf |
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Overview: STP5NC90Z - STP5NC90ZFP STB5NC90Z - STB5NC90Z-1 N-CHANNEL 900V - 2.1Ω - 4.6A TO-220/FP/D²PAK/I²PAK Zener-Protected PowerMESH™III MOSFET TYPE STP5NC90Z/FP .. STB5NC90Z/-1 s s VDSS 900V 900V RDS(on) < 2.5Ω < 2.5Ω ID 4.6 A 4.6 A 1 3 s s s TYPICAL RDS(on) = 2.
| Part number | P5NC90 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 439.21 KB |
| Description | STP5NC90 |
| Datasheet | P5NC90_STMicroelectronics.pdf |
|
|
|
The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source.
Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.
APPLICATIONS SINGLE-ENDED SMPS IN MONITORS, PUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT s I²PAK (Tabless TO-220) ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q ) PTOT IGS VESD(G-S) dv/dt VISO Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate-source Current (*) Gate source ESD(HBM-C=100pF, R=15KΩ) Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max.
| Part Number | Description |
|---|---|
| P5NC50 | STP5NC50 |
| P5NC50FP | STP5NC50FP |
| P5NA80FI | STSTP5NA80FI |
| P5NB40FP | STP5NB40FP |
| P5NB60FP | STP5NB60FP |
| P5NB80 | STP5NB80 |