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P5NC90 - STP5NC90

Datasheet Summary

Description

The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source.

Features

  • OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropiate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 3/13 STP5NC90Z.

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Datasheet Details

Part number P5NC90
Manufacturer STMicroelectronics
File Size 439.21 KB
Description STP5NC90
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Full PDF Text Transcription

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STP5NC90Z - STP5NC90ZFP STB5NC90Z - STB5NC90Z-1 N-CHANNEL 900V - 2.1Ω - 4.6A TO-220/FP/D²PAK/I²PAK Zener-Protected PowerMESH™III MOSFET TYPE STP5NC90Z/FP www.DataSheet4U.com STB5NC90Z/-1 s s VDSS 900V 900V RDS(on) < 2.5Ω < 2.5Ω ID 4.6 A 4.6 A 1 3 s s s TYPICAL RDS(on) = 2.1Ω EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE GATE CHARGE MINIMIZED D²PAK TO-220 3 1 2 TO-220FP 12 3 DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source.
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