P6N60FI datasheet by STMicroelectronics.
| Part number | P6N60FI |
|---|---|
| Datasheet | P6N60FI_STMicroelectronics.pdf |
| File Size | 266.24 KB |
| Manufacturer | STMicroelectronics |
| Description | STP6N60FI |
|
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Unit V µA µA nA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-body Leakage Current (V DS = 0) V GS = ± 20 V T c = 125 o C ON (∗) Symbol V GS(th) R DS(on) I D(on) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance Test Conditions I D = 250 µ A T c = 100o C 6 Min. 4.8 1150 160 75 1500 240 110 Max. STP6N60FI (continued) SWITCHING ON.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
P6N60 | FQP6N60 | Fairchild Semiconductor |
View all STMicroelectronics datasheets
| Part Number | Description |
|---|---|
| P6N25 | STP6N25 |
| P6NA60FI | STP6NA60FI |
| P6NB80FP | STP6NB80FP |
| P6NC60 | STP6NC60 |
| P6NC80 | STP6NC80 |
| P6NK90Z | N-CHANNEL MOSFET |
