Datasheet Summary
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STP6NC80Z
- STP6NC80ZFP STB6NC80Z
- STB6NC80Z-1
N-CHANNEL 800V
- 1.5Ω
- 5.4A TO-220/FP/D²PAK/I²PAK Zener-Protected PowerMESH™III MOSFET
TYPE STP6NC80Z/FP STB6NC80Z/-1 s s
VDSS 800V 800V
RDS(on) < 1.8 Ω < 1.8 Ω
ID 5.4 A 5.4 A
1 3 s s s
TYPICAL RDS(on) = 1.5 Ω EXTREMELY HIGH dv/dt AND CAPABILITY GATE-TO- SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE GATE CHARGE MINIMIZED
D²PAK TO-220
3 1 2
TO-220FP
DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra...