Datasheet Details
| Part number | P7NA40 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 230.11 KB |
| Description | STP7NA40 |
| Datasheet | P7NA40_STMicroelectronics.pdf |
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|
Overview: .. STP7NA40 STP7NA40FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP7NA40 STP7NA40FI s s s s s s s V DSS 400 V 400 V R DS( on) < 1Ω < 1Ω ID 6.5 A 4.1 A TYPICAL RDS(on) = 0.
| Part number | P7NA40 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 230.11 KB |
| Description | STP7NA40 |
| Datasheet | P7NA40_STMicroelectronics.pdf |
|
|
|
This series of POWER MOSFETS represents the most advanced high voltage technology.
The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE s ISOWATT220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter STP7NA40 VD S V DG R V GS ID ID ID M( •) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain-gate Voltage (RG S = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max.
| Part Number | Description |
|---|---|
| P7NB60 | STP7NB60FP |
| P7NB60FP | STP7NB60FP |
| P7NB80FP | STP7NB80 |
| P7NC80ZF | STP7NC80Z |