P7NC80ZF - STP7NC80Z

Product Overview

ST Microelectronics

Datasheet Details

Part number	P7NC80ZF
Manufacturer	STMicroelectronics
File Size	438.20 KB
Description	STP7NC80Z
Datasheet	P7NC80ZF Datasheet
Additional preview pages of the P7NC80ZF datasheet.

Product details

Description

The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source.

Features

OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/13 STP7NC80Z.

📁 Similar Datasheet

P7NC80ZFP - N-Channel 800V Power MOSFET (VBsemi)
P7NC70ZF - STP7NC70ZF (STMicroelectronics)
P7N06 - MTP7N06 (Motorola Semiconductor)
P7N60B - HGTP7N60B (Intersil Corporation)
P7N60DD2 - 600V SUPER JUNCTION MOS POWER TRANSISTOR (Silan Microelectronics)
P7N60FD2 - 600V SUPER JUNCTION MOS POWER TRANSISTOR (Silan Microelectronics)
P7N60FJDD2 - 600V SUPER JUNCTION MOS POWER TRANSISTOR (Silan Microelectronics)
P7N80 - FQP7N80 (Fairchild Semiconductor)

Other Datasheets by ST Microelectronics

P7NA40 - STP7NA40
P7NB60 - STP7NB60FP
P7NB60FP - STP7NB60FP
P7NB80FP - STP7NB80

Published: Nov 19, 2005 |