SD1285 Datasheet | STMicroelectronics

DESCRIPTION The SD1285 is a 12.5 V epitaxial NPN planar transistor designed primarily for SSB munications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Emitter 3. Base 4. Emitter VCBO VCEO VEBO IC PDISS TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 36 18 4.0 4.5 80 +200 - 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance October 1992 °C/W 1/3 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVCES BVCEO BVEBO ICES h FE IC = 50m A IC = 50m A IC = 50m A IE = 5m A VCE = 15V VCE = 5V IE = 0m A VBE = 0V IB = 0m A IC = 0m A IE = 0m A IC = 1A 36 36 18 4.0 - 10 - - - - - - - - - - 5 200 V V V V m A - DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit POUT GP IMD COB Note: PI N f = 30 MHz f = 30 MHz f = 30 MHz f = 1 MHz = 0.65 VCC = 12.5 V VCC = 12.5 V VCC = 12.5 V VCB = 12.5 V ICQ = 25 m A ICQ = 25 m A ICQ = 25 m A 20 15 - - - 18 - 100 - -...