SD1897
SD1897 is RF & MICROWAVE TRANSISTORS 1.65 GHz SATCOM APPLICATIONS manufactured by STMicroelectronics.
DESCRIPTION
The SD1897 is a 28 V Class C silicon NPN transistor designed for INMARSAT and other 1.65 GHz SAT applications. A gold metallized emitterballasted die geometry is employed providing high gain and efficiency while ensuring long term reliability and ruggedness under severe operating conditions. SD1897 is packaged in a cost-effective epoxy sealed housing. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol Parameter Value Unit
1. Collector 2. Emitter
3. Base
VCBO VCEO VEBO IC PDISS TJ T STG
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature
45 15 3.5 2.3 29 +200
- 65 to +150
V V V A W °C °C
THERMAL DATA
. RTH(j-c)
July 1993
Junction-Case Thermal Resistance
°C/W
1/4
. Data Sheet 4 U .
..
ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC
Symbol Test Conditions Value Min. Typ. Max. Unit
BVCBO BVCEO BVEBO h FE DYNAMIC
Symbol
IC = 3m A IC = 3m A IE = 3m A VCE = 5V
IE = 0m A IB = 0m A IC = 0m A IC = 600m A
45 12 3.5 15
- -
- -
- -
- 150
- Test Conditions
Value Min. Typ. Max.
Unit
POUT GP ηc f = 1.65 GHz f = 1.65 GHz f = 1.65 GHz
PIN = 0.8 W PIN = 0.8 W PIN = 0.8 W
VCE = 28 V VCE = 28 V VCE = 28 V
10 11 48
- -
- -...
