SO2222 Datasheet | STMicroelectronics

SO2222 SO2222A SMALL SIGNAL NPN TRANSISTORS Type SO2222 SO 2222A s Marking N13 N20 s s s SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS MEDIUM CURRENT AF AMPLIFICATION AND SWITCHING PNP PLEMENTS ARE RESPECTIVELY SO2907 AND SO2907A 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO I CM P t ot T stg Tj Parameter SO2222 Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Peak Current Total Dissipation at T c = 25 C Storage Temperature Max. O perating Junction Temperature o Value SO 2222A 75 40 6 0.8 350 -65 to 150 150 60 30 5 Uni t V V V A m W o o March 1996 1/5 SO2222/SO2222A THERMAL DATA R t hj-amb - R th j-SR - Thermal Resistance Junction-Ambient Thermal Resistance Junction-Substrate Max Max 350 290 o o C/W C/W - Mounted on a ceramic substrate area = 15 x 15 x 0.6 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified) Symb ol I CEX I BEX I CBO I EBO Parameter Collector Cut-off Current (V BE = 0) Base Cut-off Current (V BE = 0) Collector Cut-off Current (IE = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = 60 V V BE = -3 V for SO2222A V CE = 60 V V BE = -3 V for SO2222A V CB = rated V CBO V CB = rated V CBO V EB = 3 V for SO2222 for SO2222A I C = 10 m A for SO2222 for SO2222A I C = 10 µ A for SO2222 for SO2222A I E = 10 µ A for SO2222 for SO2222A I C = 150 m A I B = 15 m A for SO2222 for SO2222A I C = 500 m A I B = 50 m A for SO2222 for SO2222A I C = 150 m A I B = 15 m A for SO2222 for SO2222A I C = 500 m A I B = 50 m A for SO2222 for SO2222A I C = 0.1 m A I C = 1 m A I C = 10 m A I C = 150 m A I C = 150 m A I C = 500 m A for SO2222 for SO2222A V CE = 10 V V CE = 10 V VCE = 10 V V CE = 10 V V CE = 1 V V CE = 10 V 30 40 60 75 5 6 0.4 0.3 1.6 1 1.3 1.2 2.6 2 35 50 75 100 50 30 40 250 300 8 MHz MHz p F T j = 150 C o Min. Typ . Max. 10 20 10 10 30 15 Un it n A n A n A...