SO2369 Datasheet | STMicroelectronics

BSV52 SO2369/SO2369A SMALL SIGNAL NPN TRANSISTORS Type BSV52 SO2369 SO 2369A s Marking B2 N11 N81 s s SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS LOW CURRENT, FAST SWITCHING APPLICATIONS. 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CBO V CEO V EBO I CM P t ot T stg Tj Parameter SO2369/A Collector-Emitter Voltage (V BE = 0) Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Peak Current Total Dissipation at T c = 25 C Storage Temperature Max. O perating Junction Temperature o Value BSV52 20 20 12 5 0.2 200 -65 to 150 150 40 40 15 4.5 Uni t V V V V A m W o o March 1996 1/5 BSV52/SO2369/SO2369A THERMAL DATA R t hj-amb - R th j-SR - Thermal Resistance Junction-Ambient Thermal Resistance Junction-Substrate Max Max 620 400 o o C/W C/W - Mounted on a ceramic substrate area = 7 x 5 x 0.5 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified) Symb ol I CBO Parameter Collector Cut-off Current (IE = 0) Test Cond ition s V CB = 20 V for SO2369/SO 2369A V CB = 10 V for BSV52 o T j = 150 C V CB = 10 V for BSV52 V CB = 20 V for SO2369A I C = 10 µ A for SO2369/SO 2369A for BSV52 I C = 10 m A for SO2369/SO 2369A for BSV52 I C = 10 µ A for SO2369/SO 2369A for BSV52 I E = 10 µ A for SO2369/SO 2369A for BSV52 I C = 10 m A IB = 0.3 m A for BSV52 IB = 1 m A I C = 10 m A for SO2369A for BSV52 IB = 3 m A I C = 30 m A for SO2369 BSV52 IB = 5 m A I C = 50 m A for BSV52 I C = 100 m A I B = 10 m A for SO2369A I C = 10 m A IB IB I C = 30 m A for SO2369A IB I C = 50 m A for BSV52 I C = 100 m A I B for SO2369A IC IC IC IC IC IC IC = 1 m A = 3 m A = 5 m A 1.2 = 10 m A 1.6 for BSV52 for SO2369A for All typ es for SO2369A for BSV52 for SO2369A for SO2369 25 40 40 30 25 20 20 120 120 V V 0.7 40 20 15 12 40 20 4.5 5 0.3 0.2 0.25 0.25 0.4 0.5 0.85 1.15 Min. Typ . Max. 400 100 5 400 Un it n A n A µA n A V V V V V V V V V V V V...