SO2907A Datasheet | STMicroelectronics

SO2907 SO2907A SMALL SIGNAL PNP TRANSISTORS Type SO2907 SO 2907A s Marking P05 P03 s s s SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS MEDIUM CURRENT AF AMPLIFICATION AND SWITCHING NPN PLEMENTS ARE RESPECTIVELY SO2907 AND SO2907A 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO I CM P t ot T stg Tj Parameter SO2907 Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Peak Current Total Dissipation at T c = 25 C Storage Temperature Max. O perating Junction Temperature o Value SO 2907A -60 -60 -5 -0.8 350 -65 to 150 150 -60 -40 Uni t V V V A m W o o March 1996 1/4 SO2907/SO2907A THERMAL DATA R t hj-amb - R th j-SR - Thermal Resistance Junction-Ambient Thermal Resistance Junction-Substrate Max Max 350 290 o o C/W C/W - Mounted on a ceramic substrate area = 15 x 15 x 0.7 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified) Symb ol I CEX I BEX I CBO Parameter Collector Cut-off Current Base Cut-off Current Collector Cut-off Current (IE = 0) Test Cond ition s V CE = -30 V V CE = -30 V V CB = -50 V for SO2907 for SO2907A I C = -10 m A for SO2907 for SO2907A I C = -10 µ A -40 -60 -60 V BE = -3 V V BE = -3 V Min. Typ . Max. -50 -50 -20 -10 Un it n A n A n A n A V V V V ( BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V ( BR)CBO ∗ Collector-Base Breakdown Voltage (I B = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Collector-Base Saturation Voltage DC Current G ain I E = -10 µ A -5 V CE(sat )∗ V BE(s at)∗ h FE∗ I C = -150 m A I C = -500 m A I C = -150 m A I C = -500 m A I C = -0.1 m A for SO2907 for SO2907A I C = -1 m A for SO2907 for SO2907A I C = -10 m A for SO2907 for SO2907A I C = -150 m A IE = 0 IC = 0 IB = -15 m A IB = -50 m A IB = -15 m A IB = -50 m A V CE = -10 V 35 75 V CE = -10 V 50 100 VCE = -10 V 75 100 100...