SO5401 Datasheet | STMicroelectronics

SMALL SIGNAL PNP TRANSISTORS Type SO5401 s Marking P33 s s SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE AND HIGH VOLTAGE AMPLIFIER 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO I CM P t ot T stg Tj Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Peak Current Total Dissipation at T c = 25 o C Storage Temperature Max. O perating Junction Temperature Value -160 -150 -5 -0.6 200 -65 to 150 150 Uni t V V V A m W o o October 1997 1/4 THERMAL DATA R t hj-amb - R th j-SR - Thermal Resistance Junction-Ambient Thermal Resistance Junction-Substrate Max Max 620 400 o o C/W C/W - Mounted on a ceramic substrate area = 7 x 5 x 0.5 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified) Symb ol I CBO I EBO Parameter Collector Cut-off Current (IE = 0) Collector Cut-off Current (IC = 0) Test Cond ition s V CB = -120 V V EB = -3 V I C = -100 µ A -160 Min. Typ . Max. -50 -50 Un it n A n A V V ( BR)CBO ∗ Collector-Emitter Breakdown Voltage (I E = 0) V ( BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Collector-Base Saturation Voltage DC Current G ain I C = -1 m A -150 I C = -10 n A -5 V CE(sat )∗ V BE(s at)∗ h FE∗ I C = -10 m A I C = -50 m A I C = -10 m A I C = -50 m A I C = -1 m A I C = -10 m A I C = -50 m A IB = -1 m A IB = -5 m A IB = -1 m A IB = -5 m A V CE = -5 V VCE = -5 V VCE = -5 V 50 60 50 100 240 -0.2 -0.5 -1 -1 V V V V f T C CB NF h fe ∗ Transition F requency Collector Base Capacitance Noise Figure Small Signal Current Gain I C = -10 m A V CE = -10V f = 1 MHz IE = 0 V CE = -10 V f = 1 MHz f = 1KHz 400 6 5 MHz p F d B V CE = -5 V IC = -0.25 m A ∆ f = 200 Hz R G = 1 K Ω V CE = -5 V IC = -1 m A f = 1KHz ∗ Pulsed: Pulse duration =...