SO642
SO642 is SMALL SIGNAL NPN TRANSISTOR manufactured by STMicroelectronics.
SMALL SIGNAL NPN TRANSISTOR
Type SO 642 s
Marking N91 s s s
SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS HIGH VOLTAGE TRANSISTOR FOR VIDEO AMPLIFIER PNP PLEMENT IS SO692
2 3 1
SOT-23
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC I CM P t ot T stg Tj March 1996 Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Total Dissipation at T c = 25 C St orage Temperature Max. Operating Junction Temperature o
Value 300 300 6 0.1 0.3 310 -65 to 150 150
Unit V V V A A m W o o
C C 1/4
THERMAL DATA
R t hj-amb
- R th j-SR
- Thermal Resistance Junction-Ambient Thermal Resistance Junction-Substrate Max Max 450 320 o o
C/W C/W
- Mounted on a ceramic substrate area = 15 x 15 x 0.7 mm
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
Symb ol I CBO Parameter Collector Cut-off Current (IE = 0) Test Cond ition s V CB = 200 V I C = 100 µA 300 Min. Typ . Max. 100 Un it n A V
V ( BR)CBO ∗ Collector-Emitter Breakdown Voltage (I E = 0) V ( BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current G ain
I C = 1 m A
I E = 100 µ A
V CE(sat )∗ V BE(s at)∗ h FE∗
I C = 20 m A I C = 20 m A I C = 1 m A I C = 10 m A I C = 30 m A V CE = 20 V
I B = 2 m A I B = 2 m A VCE = 10 V V CE = 10 V V CE = 10 V f = 1MHz 25 40 40 50
0.5 0.9
V V f T C CB
Transition F requency Collector Base Capacitance
I C = 10 m A VCE = 20 V f = 50 MHz
MHz 3 p F
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
2/4
SOT-23 MECHANICAL DATA mm MIN. A B C D E F G H L M N O 0.85 0.65 1.20 2.80 0.95 1.9 2.1 0.38 0.3 0 0.3 0.09 TYP. MAX. 1.1 0.95 1.4 3 1.05 2.05 2.5 0.48 0.6 0.1 0.65 0.17 MIN. 33.4 25.6 47.2 110.2 37.4 74.8 82.6 14.9 11.8 0 11.8...
