SOA06
SOA06 is SMALL SIGNAL NPN TRANSISTOR manufactured by STMicroelectronics.
SMALL SIGNAL NPN TRANSISTOR
Type SOA06 s
Marking 1GT s s s
SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS MEDIUM CURRENT AF AMPLIFICATION PNP PLEMENTS IS SOA56
2 3 1
SOT-23
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC P t ot T stg Tj March 1996 Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Total Dissipation at T c = 25 C St orage Temperature Max. Operating Junction Temperature o
Value 80 80 4 0.5 350 -65 to 150 150
Unit V V V A m W o o
C C 1/4
THERMAL DATA
R t hj- amb
- Thermal Resistance Junction-Ambient Max 350 o
C/W
- Mounted on a ceramic substrate area = 15 x 15 x 0.5 mm
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
Symb ol I CBO I CEO Parameter Collector Cut-off Current (IE = 0) Collector Cut-off Current (IE = 0) Test Cond ition s V CB = 80 V V CE = 60 V I C = 1 m A 80 Min. Typ . Max. 100 100 Un it n A n A V
V ( BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter O n Voltage DC Current G ain Transition F requency
I E = 100 µ A
V CE(sat )∗ V BE(on) ∗ h FE∗ f T
I C = 100 m A I C = 100 m A I C = 10 m A I C = 100 m A I C = 10 m A
I B = 10 m A V CE = 1 V V CE = 1 V V CE = 1 V V CE = 2 V f = 100 MHz 50 50 100
0.25 1.2
MHz
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
2/4
SOT-23 MECHANICAL DATA mm MIN. A B C D E F G H L M N O 0.85 0.65 1.20 2.80 0.95 1.9 2.1 0.38 0.3 0 0.3 0.09 TYP. MAX. 1.1 0.95 1.4 3 1.05 2.05 2.5 0.48 0.6 0.1 0.65 0.17 MIN. 33.4 25.6 47.2 110.2 37.4 74.8 82.6 14.9 11.8 0 11.8 3.5 mils TYP. MAX. 43.3 37.4 55.1 118 41.3 80.7 98.4 18.8 23.6 3.9 25.6 6.7
DIM.
0044616/B
3/4
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no...
