ST13007NFP Datasheet | STMicroelectronics

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. They use a Cellular Emitter structure to enhance switching speeds. 1 2 TO-220 TO-220FP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CEV V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter ST13007N Collector-Emitter Voltage (VBE = -1.5V) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current Base Current Base Peak Current Total Dissipation at Tc ≤ 25 C Storage T emperature Max. O perating Junction Temperature o Value ST13007NF P 700 400 9 8 16 4 8 80 -65 to 150 150 33 Uni t V V V A A A A W o o March 1999 1/7 ST13007N / ST13007NFP THERMAL DATA T O- 220 R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-Ambient Max Max 1.56 62.5 T O-220F P 3.8 62.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified) Symb ol I CEV I EBO Parameter Collector Cut-off Current (V BE = -1.5V) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = rated V CEV V CE = rated V CEV V EB = 9 V I C = 10 m A IC IC IC IC = = = = 2 5 8 5 A A A A IB IB IB IB = = = = 0.4 A 1 A 2 A 1 A 400 1 2 3 3 1.2 1.6 1.5 15 26 5 0.6 60 28 40 30 1.5 110 µs ns Tc = 100 C o Min. Typ . Max. 1 5 1 Un it m A m A m A V V V V V V V V V CEO(sus )∗ Collector-Emitter Sustaining Voltage V CE(sat )∗ Collector-Emitter Saturation Voltage T c = 100 C o V BE(s at)∗ Base-Emitt er Saturation Voltage DC Current Gain IC = 2 A IC = 5 A IC = 5 A IC = 2 A Group A Group B IC = 5 A IC = 5 A I B1 = 1 A R BB = 0 Ω IB = 0.4 A IB = 1 A IB = 1 A VCE = 5 V T c = 100 o C h F E∗ VCE = 5 V V CL = 200 V V BEo ff = -5 V ts tf INDUCTIVE LO AD Storage Time Fall Time - Pulsed: Pulse duration = 300 µs, duty cycle 2 % Note : Product is pre-selected in DC current gain (GROUP A and GROUP B). STMicroelectronics reserves the right to ship...