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ST2310DHI Datasheet High Voltage Fast-switching NPN Power Transistor

Manufacturer: STMicroelectronics

Overview: ® ST2310DHI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s s s NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE (U.L.

General Description

The device is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation.

ISOWATT218 INTERNAL SCHEMATIC DIAGRAM RBE =32 Ω Typ.

ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB P tot V isol T stg Tj April 2003 Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Total Dissipation at T c = 25 o C Insulation Withstand Voltage (RMS) from All Three Leads to External Heatsink Storage Temperature Max.

ST2310DHI Distributor

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