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ST2310FX Datasheet High Voltage Fast-switching NPN Power Transistor

Manufacturer: STMicroelectronics

Overview: ® ST2310FX HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s s NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE (U.L.

General Description

The device is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation.

ISOWATT218FX INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB P tot V isol T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Total Dissipation at T C = 25 o C Insulation Withstand Voltage (RMS) from All Three Leads to External Heatsink Storage Temperature Max.

Operating Junction Temperature Value 1500 600 7 12 25 7 65 2500 -65 to 150 150 Unit V V V A A A W V o o C C 1/6 October 2003 ST2310FX THERMAL DATA R thj-case Thermal Resistance Junction-case Max 1.9 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES I EBO Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 1500 V V CE = 1500 V V EB = 7 V I C = 100 mA L = 25 mH 600 T J = 125 o C Min.

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