ST2408HI
ST2408HI is HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR manufactured by STMicroelectronics.
DESCRIPTION
The device is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation.
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CES V CEO V EBO IC I CM IB P t ot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Total Dissipation at Tc = 25 o C St orage Temperature Max. Operating Junction Temperature Value 1500 600 7 12 25 7 55 -65 to 150 150 Uni t V V V A A A W o o
February 2000
1/6
THERMAL DATA
R t hj-ca se Thermal Resistance Junction-case Max 2.3 o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
Symb ol I CES I EBO Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = 1500 V V EB = 7 V I C = 100 m A L = 25 m H 600 Min. Typ . Max. 1 1 Un it m A m A V
V CEO(sus )∗ Collector-Emitter Sustaining Voltage (I B = 0) V CE(s at)- V BE(s at)∗ h F E∗ Collector-Emitter Saturation Voltage Base-Emitt er Saturation Voltage DC Current Gain INDUCTIVE LO AD Storage Time Fall Time
IC = 8 A IC = 8 A IC = 1 A IC = 8 A IC = 7 A I B(o n) = 1.5 A L B = 0.4 µ H
IB = 2 A IB = 2 A V CE = 5 V V CE = 5 V fh = 82 KHz V BB(off ) = -2.5 V 25 6 2.1 110
3 1.5
9 2.4 150 µs ns ts tf
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Area
Thermal Impedance
2/6
Derating Curve DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Power Losses
Switching Time Inductive Load
3/6
Reverse Biased Soa
4/6
ISOWATT218 NARROW LEADS MECHANICAL DATA
DIM. A C D D1 E F F2 F3 F5 G H L L1 L2 L3 L4 L5 L6 N R DIA mm TYP. inch TYP.
MIN. 5.35 3.30 2.90 1.88 0.75 0.75 1.50 1.90 10.80 15.80
MAX. 5.65 3.80 3.10 2.08 0.95 0.95 1.70 2.10 1.10 11.20 16.20 21.20 19.90 23.60...
