ST24E16 Datasheet | STMicroelectronics

FEATURE BYTE and PAGE WRITE (up to 16 BYTES) BYTE, RANDOM and SEQUENTIAL READ MODES SELF TIMED PROGRAMING CYCLE AUTOMATIC ADDRESS INCREMENTING ENHANCED ESD/LATCH UP PERFORMANCES 8 1 PSDIP8 (B) 0.25mm Frame 8 1 SO8 (M) 150mil Width Figure 1. Logic Diagram DESCRIPTION The ST24/25E16 are 16 Kbit electrically erasable programmable memories (EEPROM), organized as 8 blocks of 256 x8 bits. It is manufactured in STMicroelectronics’s Hi-Endurance Advanced CMOS technology which guarantees an endurance of one million erase/write cycles over the full supply voltage range, and a data retention of over 40 years. The ST25E16 operates with a power supply value as low as 2.5V. 3 E0-E2 SCL WC ST24E16 ST25E16 SDA Table 1. Signal Names E0 - E2 SDA SCL WC VCC VSS Chip Enable Inputs Serial Data Address Input/Output Serial Clock Write Control Supply Voltage Ground AI01102B February 1999 1/16 ST24E16, ST25E16 Figure 2A. DIP Pin Connections Figure 2B. SO Pin Connections ST24E16 ST25E16 E0 E1 E2 VSS 1 2 3 4 8 7 6 5 AI01103B ST24E16 ST25E16 VCC WC SCL SDA E0 E1 E2 VSS 1 2 3 4 8 7 6 5 AI01104C VCC WC SCL SDA Table 2. Absolute Maximum Ratings (1) Symbol TA TSTG TLEAD VIO VCC VESD Parameter Ambient Operating Temperature Storage Temperature Lead Temperature, Soldering Input or Output Voltages Supply Voltage Electrostatic Discharge Voltage (Human Body model) (2) Electrostatic Discharge Voltage (Machine model) (3) Value - 40 to 125 - 65 to 150 Unit °C °C °C V V V V (SO8) (PSDIP8) 40 sec 10 sec 215 260 - 0.6 to 6.5 - 0.3 to 6.5 4000 500 Notes: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device...