ST93C06 Datasheet | STMicroelectronics

ST93C06 ST93C06C 256 bit (16 x 16 or 32 x 8) SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION DUAL ORGANIZATION: 16 x 16 or 32 x 8 BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE 5V ±10% SUPPLY VOLTAGE SEQUENTIAL READ OPERATION 5ms TYPICAL PROGRAMMING TIME ENHANCED ESD/LATCH UP PERFORMANCES for ”C” VERSION ST93C06 and ST93C06C are replaced by the M93C06 DESCRIPTION The ST93C06 and ST93C06C are 256 bit Electrically Erasable Programmable Memory (EEPROM) fabricated with SGS-THOMSON’s High Endurance Single Polysilicon CMOS technology. In the text the two products are referred to as ST93C06. The memory is divided into either 32 x 8 bit bytes or 16 x 16 bit words. The organization may be selected by a signal applied on the ORG input. The memory is accessed through a serial input (D) and by a set of instructions which includes Read a byte/word, Write a byte/word, Erase a byte/word, Erase All and Write All. ARead instruction loads the address of the first byte/word to be read into an internal address pointer. Table 1. Signal Names S D Q C ORG VCC VSS June 1997 Chip Select Input Serial Data Input Serial Data Output Serial Clock Organisation Select Supply Voltage Ground 8 1 PSDIP8 (B) 0.4mm Frame 8 1 SO8 (M) 150mil Width Figure 1. Logic Diagram D C S ORG ST93C06 ST93C06C AI00816B 1/15 This is information on a product still in production bu t not remended for new de signs. ST93C06, ST93C06C Figure 2A. DIP Pin Connections Figure 2B. SO Pin Connections ST93C06 ST93C06C S C D Q 1 2 3 4 8 7 6 5 AI00817B ST93C06 ST93C06C VCC DU ORG VSS S C D Q 1 2 3 4 8 7 6 5 AI00818C VCC DU ORG VSS Warning: DU = Don’t Use Warning: DU = Don’t Use Table 2....