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STAP1011-180 Datasheet RF Power Transistor

Manufacturer: STMicroelectronics

General Description

The STAP1011-180 is a common source N-channel enhancement-mode lateral field-effect RF power transistor.

It is designed for 1030-1090 MHz avionics applications.

STAP1011-180 is mounted in STAP ST advanced PowerSO-10RF package.

Overview

STAP1011-180 www.datasheet4u.com RF power transistor the LdmoST family, N-channel enhancement-mode lateral.

Key Features

  • Excellent thermal stability Common source configuration push-pull POUT = 180W with 10 dB gain @ 1030 MHz 36 V/100 µsec - 10% Plastic package In compliance with the 2002/95/EC european directive.