STAP1011-180 Datasheet | STMicroelectronics

.. RF power transistor the LdmoST family, N-channel enhancement-mode lateral MOSFETs Features - - - - - Excellent thermal stability mon source configuration push-pull POUT = 180W with 10 dB gain @ 1030 MHz 36 V/100 µsec - 10% Plastic package In pliance with the 2002/95/EC european directive Description The STAP1011-180 is a mon source N-channel enhancement-mode lateral field-effect RF power transistor. It is designed for 1030-1090 MHz avionics applications. STAP1011-180 is mounted in STAP ST advanced PowerSO-10RF package. The STAP package was designed to offer high reliability and power capability. It has been specially optimized for RF needs and...