STAP57045 Datasheet | STMicroelectronics

.. RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Preliminary Data Features - - - - Excellent thermal stability mon source configuration POUT = 45 W with 13 dB gain @ 945 MHz / 28 V ST advanced PowerSO-10RF-STAP package Description The STAP57045 is a mon source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band mercial and industrial applications. It operates at 28 V in mon source mode at frequencies of up to 1 GHz. STAP57045 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in STAP1 plastic RF power...