Datasheet4U Logo Datasheet4U.com

STAP57060 Datasheet RF power transistor

Manufacturer: STMicroelectronics

General Description

The STAP57060 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power MOSFET.

It is designed for high gain, broad band commercial and industrial applications.

It operates at 28 V in common source mode at frequencies of up to 1 GHz.

Overview

STAP57060 www.datasheet4u.com RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral.

Key Features

  • Excellent thermal stability Common source configuration POUT = 60 W with 14.3 dB gain @ 945 MHz / 28 V ST advanced PowerSO-10 RF-STAP-package.