STAP57060 Datasheet | STMicroelectronics

.. RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features - - - - Excellent thermal stability mon source configuration POUT = 60 W with 14.3 dB gain @ 945 MHz / 28 V ST advanced PowerSO-10 RF-STAP-package Description The STAP57060 is a mon source N-Channel, enhancement-mode lateral Field-Effect RF power MOSFET. It is designed for high gain, broad band mercial and industrial applications. It operates at 28 V in mon source mode at frequencies of up to 1 GHz. STAP57060 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in STAP1 plastic RF power package. STAP package has...