STAP85050 Description
The PD20010-E is a mon source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband mercial and industrial applications. It operates at 13.6 V in mon source mode at frequencies of up to 1 GHz.
STAP85050 Key Features
- Excellent thermal stability mon source configuration POUT = 10 W with 11 dB gain @ 2 GHz / 13.6 V Plastic package ESD pr