STAP85050 Datasheet | STMicroelectronics

PD20010-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs .. Features - - - - - - Excellent thermal stability mon source configuration POUT = 10 W with 11 dB gain @ 2 GHz / 13.6 V Plastic package ESD protection In pliance with the 2002/95/EC european directive PowerSO-10RF (formed lead) Description The PD20010-E is a mon source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband mercial and industrial applications. It operates at 13.6 V in mon source mode at frequencies of up to 1 GHz. PD20010-E boasts the excellent gain, linearity and reliability of ST’s...