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STAP85050

Manufacturer: STMicroelectronics

STAP85050 datasheet by STMicroelectronics.

STAP85050 datasheet preview

STAP85050 Datasheet Details

Part number STAP85050
Datasheet STAP85050_STMicroelectronics.pdf
File Size 280.01 KB
Manufacturer STMicroelectronics
Description RF power transistor
STAP85050 page 2 STAP85050 page 3

STAP85050 Overview

The PD20010-E is a mon source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband mercial and industrial applications. It operates at 13.6 V in mon source mode at frequencies of up to 1 GHz.

STAP85050 Key Features

  • Excellent thermal stability mon source configuration POUT = 10 W with 11 dB gain @ 2 GHz / 13.6 V Plastic package ESD pr
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