STB100NF03L-03-1
Description
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Key Features
- ) Ptot EAS(2) Tstg Tj Parameter Drain-source Voltage (VGS =
