STB20NE06
STB20NE06 is N-CHANNEL POWER MOSFET manufactured by STMicroelectronics.
sfet is the latest development of STMicroelectronis unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics INTERNAL SCHEMATIC DIAGRAM and less critical alignment steps therefore a .. remarkable manufacturing reproducibility.
D2PAK TO-263 (suffix ”T4”)
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THERMAL DATA
R thj -case
Rthj -amb
R thc-sink Tl
Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature F or Soldering Purpose
2.14 62.5 0.5 300
C/W o C/W o C/W o C o
AVALANCHE CHARACTERISTICS
Symbo l IAR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 o C, ID = IAR , V DD = 25 V) Max Value 20 100 Unit A m J
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified) OFF
Symbo l V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Con ditions I D = 250 µ A V GS = 0 Min. 60 1 10 ± 100 Typ. Max. Unit V µA µA n A
Gate-body Leakage Current (VDS = 0)
V GS = ± 20 V
ON (∗)
Symbo l V GS(th) R DS(on) I D(o n) Parameter
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Test Con ditions ID = 250 µ A I D = 10 A 20 Min. 2 Typ. 3 0.060 Max. 4 0.080 Unit V Ω Ω A Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance On State Drain Current V GS = 10 V
V DS > ID(o n) x R DS(on )ma x V GS = 10 V
DYNAMIC
Symbo l g f s (∗ ) C iss C os s C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Con ditions V DS > ID(o n) x R DS(on )ma x V DS = 25 V f = 1 MHz I D =10 A V GS = 0 Min. 5 Typ. 9 900 125 35 Max. Unit S p F p F p F
2/8
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V DS =...
