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STB20NM50-1 - N-CHANNEL POWER MOSFET

General Description

The MDmesh™ is a new revolutionary Power MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™horizontal layout.

The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics and dynamic performances.

Key Features

  • Type STB20NM50 STB20NM50-1 STP20NM50 STP20NM50FP VDSS (@TJmax) 550V 550V 550V 550V RDS(on) < 0.25Ω < 0.25Ω < 0.25Ω < 0.25Ω ID 20A 20A 20A 20A.
  • High dv/dt and avalanche capabilities.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.

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STB20NM50 - STB20NM50-1 STP20NM50 - STP20NM50FP N-channel 500V - 0.20Ω - 20A - TO220/FP-D2PAK-I2PAK MDmesh™ Power MOSFET General features Type STB20NM50 STB20NM50-1 STP20NM50 STP20NM50FP VDSS (@TJmax) 550V 550V 550V 550V RDS(on) < 0.25Ω < 0.25Ω < 0.25Ω < 0.25Ω ID 20A 20A 20A 20A ■ High dv/dt and avalanche capabilities ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Description The MDmesh™ is a new revolutionary Power MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics and dynamic performances.