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STB20NM50-1

Manufacturer: STMicroelectronics

STB20NM50-1 datasheet by STMicroelectronics.

STB20NM50-1 datasheet preview

STB20NM50-1 Datasheet Details

Part number STB20NM50-1
Datasheet STB20NM50-1_STMicroelectronics.pdf
File Size 296.99 KB
Manufacturer STMicroelectronics
Description N-CHANNEL POWER MOSFET
STB20NM50-1 page 2 STB20NM50-1 page 3

STB20NM50-1 Overview

The MDmesh™ is a new revolutionary Power MOSFET technology that associates the Multiple Drain process with the pany’s PowerMESH™horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics and dynamic performances. ratings Symbol Parameter VDS Drain source voltage VGS Gate-source voltage ID Drain current (continuous) at TC = 25°C ID...

STB20NM50-1 Key Features

  • High dv/dt and avalanche capabilities
  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance

STB20NM50-1 from other manufacturers

View STB20NM50-1 datasheet index

Brand Logo Part Number Description Other Manufacturers
INCHANGE Logo STB20NM50-1 N-Channel MOSFET INCHANGE
STMicroelectronics logo - Manufacturer

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