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STB22NM60-1 - N-CHANNEL Power MOSFET

Download the STB22NM60-1 datasheet PDF. This datasheet also covers the STB22NM60 variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This improved version of MDmesh™ which is based on Multiple Drain process represents the new benchmark in high voltage MOSFETs.

The resulting product exhibits even lower on-resistance, impressively high dv/dt and excellent avalanche characteristics.

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Note: The manufacturer provides a single datasheet file (STB22NM60_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by STMicroelectronics

Part Number Description
STB22NM60 N-CHANNEL Power MOSFET
STB22NM60N Power MOSFET
STB22NM50 N-CHANNEL POWER MOSFET
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STB22NE03L N-CHANNEL POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com STP22NM60 - STF22NM60 STB22NM60 - STB22NM60-1 - STW22NM60 N-CHANNEL 600V - 0.19 Ω - 22A TO-220/FP/D2PAK/I2PAK/TO-247 MDmesh™Power MOSFET ADVANCED DATA TYPE STP22NM60 STF22NM60 STB22NM60 STB22NM60-1 STW22NM60 s s s s s VDSS 600 600 600 600 600 V V V V V RDS(on) < 0.25 Ω < 0.25 Ω < 0.25 Ω < 0.25 Ω < 0.25 Ω Rds(on)*Qg 7.6 7.6 7.6 7.6 7.6 Ω*nC Ω*nC Ω*nC Ω*nC Ω*nC ID 22 22 22 22 22 A A A A A 3 1 2 1 3 2 TO-220 3 2 1 TO-220FP TYPICAL RDS(on) = 0.19Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TO-247 3 12 3 1 I2PAK D2PAK DESCRIPTION This improved version of MDmesh™ which is based on Multiple Drain process represents the new benchmark in high voltage MOSFETs.