STB3NK60Z Datasheet | STMicroelectronics

DESCRIPTION The Super MESH™ series is obtained through an extreme optimization of ST’s well established stripbased Power MESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series plements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC s LIGHTING s ORDERING INFORMATION SALES TYPE STP3NK60Z STP3NK60ZFP STB3NK60ZT4 STD3NK60Z-1 STD3NK60ZT4 July 2003 MARKING P3NK60Z P3NK60ZFP B3NK60Z D3NK60Z D3NK60Z PACKAGE TO-220 TO-220FP D2PAK IPAK DPAK PACKAGING TUBE TUBE TAPE & REEL TUBE TAPE & REEL 1/15 STP3NK60Z /FP - STB3NK60Z - STD3NK60Z - STD3NK60Z-1 ABSOLUTE MAXIMUM RATINGS Symbol Parameter STP3NK60Z STB3NK60Z Value STP3NK60ZFP STD3NK60Z STD3NK60Z-1 Unit VDS VDGR VGS ID ID IDM ( ) PTOT VESD(G-S) dv/dt (1) VISO Tj Tstg Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD(HBM-C=100p F, R=1.5KΩ) Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Operating Junction Temperature Storage Temperature 2.4 1.51 9.6 45 0.36 600 600 ± 30 2.4 (- ) 1.51 (- ) 9.6 (- ) 20 0.16 2100 4.5 2500 -55 to 150 2.4 (- ) 1.51 (- ) 9.6 (- ) 45 0.36 V V V A A A W W/°C V V/ns V °C ( ) Pulse width limited by safe operating area (1) ISD ≤2.4 A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. (- ) Limited only by maximum temperature allowed THERMAL DATA TO-220 D2PAK Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 2.78 62.5 300 TO-220FP 6.25 DPAK IPAK 2.78 100 °C/W °C/W °C AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter...