STB60NE06-16 Datasheet | STMicroelectronics

- CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE™ ” POWER MOSFET TYPE STB60NE06-1 s s s s s s V DSS 60 V R DS(on) < 0.016 Ω ID 60 A s TYPICAL RDS(on) = 0.013 Ω EXCEPTIONAL dV/dt CAPABILTY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC HIGH dV/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE 3 1 D2PAK TO-263 (Suffix ”T4”) DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ” Single Feature Size™ ” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable...