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STB60NE06-16
N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE™ ” POWER MOSFET
TYPE STB60NE06-1
s s s s s s
V DSS 60 V
R DS(on) < 0.016 Ω
ID 60 A
s
TYPICAL RDS(on) = 0.013 Ω EXCEPTIONAL dV/dt CAPABILTY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC HIGH dV/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE
3 1
D2PAK TO-263 (Suffix ”T4”)
DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ” Single Feature Size™ ” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
STB60NE06-16 Datasheet
