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STB6LNC60 - N-CHANNEL Power MOSFET

Description

The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™.

area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness.

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N-CHANNEL 600V - 1Ω - 5.8A D2PAK PowerMesh™II MOSFET TYPE STB6LNC60 s s s s s STB6LNC60 VDSS 600 V RDS(on) < 1.25 Ω ID 5.8 A TYPICAL RDS(on) = 1.0 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED 3 1 D2PAK DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness.
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