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STB75N15 - N-CHANNEL MOSFET

General Description

This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge.

It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters.

Key Features

  • TYPE STP75N15 STB75N15T4 STW75N15 s s s s Figure 1: Package ID 75 A 75 A 75 A Pw 300 W 300 W 350 W 3 1 2 2 1 3 VDSS 150 V 150 V 150 V RDS(on) < 0.023 Ω < 0.023 Ω < 0.023 Ω s s.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STP75N15 STW75N15 - STB75N15 N-CHANNEL 150V - 0.02Ω - 75A TO-220/D²PAK/TO-247 LOW GATE CHARGE STripFET™ MOSFET TARGET SPECIFICATION Table 1: General Features TYPE STP75N15 STB75N15T4 STW75N15 s s s s Figure 1: Package ID 75 A 75 A 75 A Pw 300 W 300 W 350 W 3 1 2 2 1 3 VDSS 150 V 150 V 150 V RDS(on) < 0.023 Ω < 0.023 Ω < 0.023 Ω s s TYPICAL RDS(on) = 20 mΩ GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY EXCELLENT FIGURE OF MERIT (RDS*Qg) 100% AVALANCHE TESTED TO-220 TO-247 3 1 DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters.