Datasheet4U Logo Datasheet4U.com

STB76NF80 - Power MOSFETs

General Description

This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process.

Key Features

  • Type STB76NF80 VDSS 80 V RDS(on) max ID < 0.011 Ω 80 A(1) 3 1 1. Current limited by package.
  • Exceptional dv/dt capability 100% avalanche tested D²PAK.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STB76NF75 N-CHANNEL POWER MOSFET STMicroelectronics
STB7001 900MHz THREE GAIN LEVEL LNA STMicroelectronics
STB70L60 N-Channel Logic Level Enhancement Mode Field Effect Transistor SamHop
STB70N10F4 N-CHANNEL MOSFET STMicroelectronics
STB70NF03L-1 N-CHANNEL POWER MOSFET STMicroelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STB70NF03L N-CHANNEL MOSFET
STB70NF3LL N-channel Power MOSFET
STB70NFS03L N-channel Power MOSFET
STB7100 Low-cost set-top box decoder chip for MPEG-4 AVC and HD MPEG-2
STB7101 0.9/1.9GHz BROAD BAND PRE-POWER AMPLIFIER

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com STB76NF80 N-channel 80 V, 0.0095 Ω, 80 A D2PAK STripFET™ II Power MOSFET Features Type STB76NF80 VDSS 80 V RDS(on) max ID < 0.011 Ω 80 A(1) 3 1 1. Current limited by package ■ ■ Exceptional dv/dt capability 100% avalanche tested D²PAK Application ■ Switching applications – Automotive Figure 1. Internal schematic diagram $4!"OR Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. ' 3 !-V Table 1.