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STB7NK80Z - N-CHANNEL MOSFET

Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Features

  • Type VDSS (@Tjmax) STP7NK80Z STP7NK80ZFP STB7NK80Z STB7NK80Z-1 800V 800V 800V 800V RDS(on) < 1.8Ω < 1.8Ω < 1.8Ω < 1.8Ω ID 5.2A 5.2A 5.2A 5.2A.
  • Extremely high dv/dt capability.
  • 100% avalanche tested.
  • Gate charge minimized.
  • Very low intrinsic capacitances.
  • Very good manufacturing repeatability.

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Datasheet preview – STB7NK80Z

Datasheet Details

Part number STB7NK80Z
Manufacturer STMicroelectronics
File Size 609.55 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet STB7NK80Z Datasheet
Additional preview pages of the STB7NK80Z datasheet.

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Full PDF Text Transcription

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STB7NK80Z, STB7NK80Z-1 STP7NK80ZFP, STP7NK80Z N-channel 800 V, 1.5 Ω, 5.2 A, TO-220,TO-220FP,D2PAK,I2PAK Zener-protected SuperMESH™ Power MOSFET Features Type VDSS (@Tjmax) STP7NK80Z STP7NK80ZFP STB7NK80Z STB7NK80Z-1 800V 800V 800V 800V RDS(on) < 1.8Ω < 1.8Ω < 1.8Ω < 1.8Ω ID 5.2A 5.2A 5.2A 5.2A ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability Applications ■ Switching application Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
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