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STB80NF03L-04T - N-channel Power MOSFET

General Description

This MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process.

Key Features

  • TYPE STB80NF03L-04T STB80NF03L-04T-1 s s s Figure 1: Package RDS(on) < 0.004 Ω < 0.004 Ω ID (1) 80 A 80 A VDSS 30 V 30 V.

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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com STB80NF03L-04T-1 STB80NF03L-04T N-CHANNEL 30 V - 0.0035Ω - 80A D²PAK/I²PAK STripFET™II MOSFET Table 1: General Features TYPE STB80NF03L-04T STB80NF03L-04T-1 s s s Figure 1: Package RDS(on) < 0.004 Ω < 0.004 Ω ID (1) 80 A 80 A VDSS 30 V 30 V TYPICAL RDS(on) = 0.0035 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED 3 1 3 12 DESCRIPTION This MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.