Datasheet4U Logo Datasheet4U.com

STC05IE150HV - Emitter Switched Bipolar Transistor

Datasheet Summary

Description

The STC05IE150HV is manufactured in Monolithic ESBT Technology, aimed to provide best performance in high frequency / high voltage applications.

it is designed for use in Gate Driven based topologies.

Features

  • VCS(ON) 0.6 V.

📥 Download Datasheet

Datasheet preview – STC05IE150HV

Datasheet Details

Part number STC05IE150HV
Manufacturer STMicroelectronics
File Size 145.22 KB
Description Emitter Switched Bipolar Transistor
Datasheet download datasheet STC05IE150HV Datasheet
Additional preview pages of the STC05IE150HV datasheet.

📁 Similar Datasheet

Other Datasheets by ST Microelectronics
  • STC05IE150HP - Emitter Switched Bipolar Transistor
  • STC05DE120HV - Hybrid emitter switched bipolar transistor
  • STC05DE150 - HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR
  • STC03DE150 - HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR
  • STC03DE170 - HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR
  • STC03DE170HP - Hybrid emitter switched bipolar transistor
  • STC03DE170HV - HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT
  • STC03DE220HV - Hybrid emitter switched bipolar transistor

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com STC05IE150HV Emitter Switched Bipolar Transistor ESBT® 1500 V - 5 A - 0.12 Ω Features VCS(ON) 0.6 V ■ PRELIMINARY DATA IC 5A RCS(ON) 0.12 W High voltage / high current Cascode configuration Low equivalent on resistance Very fast-switch, up to 150 kHZ Squared rbsoa, up to 1500 V Very low C ISS driven by RG = 47 Ω Very low turn-off cross over time In compliance with the 2002/93/EC European Directive ■ ■ ■ ■ ■ ■ 1 23 4 TO247-4LHV Applications ■ ■ Aux SMPS for three phase mains Sepic PFC Internal Schematic Diagram Description The STC05IE150HV is manufactured in Monolithic ESBT Technology, aimed to provide best performance in high frequency / high voltage applications. it is designed for use in Gate Driven based topologies.
Published: |