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STC05IE150HV - Emitter Switched Bipolar Transistor

General Description

The STC05IE150HV is manufactured in Monolithic ESBT Technology, aimed to provide best performance in high frequency / high voltage applications.

it is designed for use in Gate Driven based topologies.

Key Features

  • VCS(ON) 0.6 V.

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Full PDF Text Transcription for STC05IE150HV (Reference)

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www.DataSheet4U.com STC05IE150HV Emitter Switched Bipolar Transistor ESBT® 1500 V - 5 A - 0.12 Ω Features VCS(ON) 0.6 V ■ PRELIMINARY DATA IC 5A RCS(ON) 0.12 W High volta...

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tures VCS(ON) 0.6 V ■ PRELIMINARY DATA IC 5A RCS(ON) 0.12 W High voltage / high current Cascode configuration Low equivalent on resistance Very fast-switch, up to 150 kHZ Squared rbsoa, up to 1500 V Very low C ISS driven by RG = 47 Ω Very low turn-off cross over time In compliance with the 2002/93/EC European Directive ■ ■ ■ ■ ■ ■ 1 23 4 TO247-4LHV Applications ■ ■ Aux SMPS for three phase mains Sepic PFC Internal Schematic Diagram Description The STC05IE150HV is manufactured in Monolithic ESBT Technology, aimed to provide best performance in high frequency / high voltage applications. it is designed for use in Gate Driven

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