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STC5NF30V - N-Channel Power MOSFET

General Description

uc This Power MOSFET is the latest development of d STMicroelectronis unique "Single Feature Size™" ro strip-based process.

Key Features

  • Type VDSS RDS(on) ID < 0.031 Ω ( @ 4.5 V ) STC5NF30V 30V < 0.035 Ω ( @ 2.7 V ) 5A.
  • Ultra low threshold gate drive (2.7V).
  • Standard outline for easy automated surface mount assembly t(s).

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STC5NF30V N-channel 30V - 0.027Ω - 5A - TSSOP8 2.7V-drive STripFET™ II Power MOSFET General features Type VDSS RDS(on) ID < 0.031 Ω ( @ 4.5 V ) STC5NF30V 30V < 0.035 Ω ( @ 2.7 V ) 5A ■ Ultra low threshold gate drive (2.7V) ■ Standard outline for easy automated surface mount assembly t(s) Description uc This Power MOSFET is the latest development of d STMicroelectronis unique "Single Feature Size™" ro strip-based process. The resulting transistor P shows extremely high packing density for low onte resistance, rugged avalanche characteristics and less critical alignment steps therefore a le remarkable manufacturing reproducibility.