Datasheet4U Logo Datasheet4U.com

STD150NH02L - N-CHANNEL POWER MOSFET

General Description

The STD150NH02L utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology.

This novel 0.6µ process utilizes also unique metallization techniques that couple to a "bondless" assembly technique result in outstanding performance with standard DPAK outline.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
N-CHANNEL 24V - 0.003 Ω - 150A ClipPAK™/IPAK STripFET™ III POWER MOSFET PRELIMINARY DATA TYPE STD150NH02L s s s s s s s STD150NH02L VDSS 24 V RDS(on) < 0.0035 Ω ID 150 A s TYPICAL RDS(on) = 0.003 Ω @ 10 V TYPICAL RDS(on) = 0.005 Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED LOW THRESHOLD DEVICE THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX “-1") SURFACE-MOUNTING POWER PACKAGE IN TAPE & REEL (SUFFIX “T4”) 3 2 1 IPAK TO-251 (Suffix “-1”) 3 1 ClipPak™ (Suffix “T4”) DESCRIPTION The STD150NH02L utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This novel 0.