STD16NF06L Overview
Key Specifications
Package: DPAK
Mount Type: Surface Mount
Pins: 3
Height: 2.4 mm
Description
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility APPLICATIONS - SWITCHING APPLICATIONS Figure 2: Internal Table 2: Order Codes SALES TYPE STD16NF06LT4 STD16NF06L-1 MARKING D16NF06L D16NF06L PACKAGE TO-252 TO-251 PACKAGING TAPE & REEL TUBE Table 3: Symbol VDS VDGR VGS ID ID IDM( - ) Ptot dv/dt (1) EAS (2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature Value 60 60 ± 18 24 17 96 40 0.27 11.5 200 -55 to 175 (1) ISD ≤16A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX (2) Starting Tj = 25 oC, ID = 20A, VDD= 48V Unit V V V A A A W W/°C V/ns mJ °C ( - ) Pulse width limited by safe operating area.
Key Features
- STD16NF06L Figure 1:Package RDS(on) < 0.070 Ω ID 24 A VDSS 60 V
