Datasheet Summary
®
- CHANNEL 500V
- 7.5Ω
- 1.4A IPAK PowerMESH™ MOSFET
TYPE ST D1NB50 s s s s s s
V DSS 500V
R DS(on) < 9Ω
ID 1.4 A
TYPICAL RDS(on) = 7.5 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED FOR SMD DPAK VERSION CONTACT SALES OFFICE IPAK TO-251 (Suffix ”-1”)
3 1 2
DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the pany’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and...