Datasheet Details
| Part number | STD1NB50 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 87.52 KB |
| Description | N-CHANNEL POWER MOSFET |
| Download | STD1NB50 Download (PDF) |
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Overview: ® STD1NB50 N - CHANNEL 500V - 7.5Ω - 1.4A IPAK PowerMESH™ MOSFET TYPE ST D1NB50 s s s s s s V DSS 500V R DS(on) < 9Ω ID 1.4 A TYPICAL RDS(on) = 7.
| Part number | STD1NB50 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 87.52 KB |
| Description | N-CHANNEL POWER MOSFET |
| Download | STD1NB50 Download (PDF) |
|
|
|
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
APPLICATIONS SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID I DM ( • ) P tot dv/dt( 1) Ts tg Tj March 2000 Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 o C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max.
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