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STD35N3LH5 - Power MOSFETs

General Description

This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class figure of merit (FOM).

Table 1.

Key Features

  • Type STD35N3LH5.
  • VDSS 30 V RDS(on) max < 16 mΩ ID 35 A 3 1 100% avalanche tested Surface mounting DPAK (TO-252) RDS(on).
  • Qg industry benchmark Low gate drive power losses DPAK.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STD35N3LH5 N-channel 30 V, 14 mΩ , 35 A, DPAK STripFET™ V Power MOSFET Preliminary data Features Type STD35N3LH5 ■ ■ ■ ■ VDSS 30 V RDS(on) max < 16 mΩ ID 35 A 3 1 100% avalanche tested Surface mounting DPAK (TO-252) RDS(on) * Qg industry benchmark Low gate drive power losses DPAK Applications ■ Switching applications – Automotive Figure 1. Internal schematic diagram Description This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class figure of merit (FOM). www.DataSheet4U.com Table 1. Device summary Marking D35N3LH5 Package DPAK Packaging Tape and reel Order codes STD35N3LH5 October 2009 Doc ID 16359 Rev 1 1/11 www.st.