STD38NF03L
STD38NF03L is N-CHANNEL MOSFET manufactured by STMicroelectronics.
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®
- CHANNEL 30V
- 0.013 Ω
- 38A TO-252 STrip FET™ POWER MOSFET
PRELIMINARY DATA
TYPE STD38NF03L s s
V DSS 30 V
R DS(o n) < 0.019 Ω
ID 38 A s s
TYPICAL RDS(on) = 0.013 Ω OPTIMIZED FOR HIGH SWTICHING OPERATIONS LOW THRESHOLD DRIVE ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL
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DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS
DPAK TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol V DS V DGR VGS ID (- ) ID I DM (
- ) P tot T st g Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 o C Drain Current (continuous) at Tc = 100 o C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature o
Value 30 30 ± 20 38 27 152 45 0.3 -65 to 175 175
(
- )Value limited by the package
Unit V V V A A A W W /o C o o
(- ) Pulse width limited by safe operating area
March 2000
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THERMAL DATA
R th j-pc b R thj -amb R t hj-s ink Tl Thermal Resistance Junction-PC Board Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink T yp Maximum Lead Temperature F or Soldering Purpose 3.33 62.5 1.5 300 o o
C/W C/W o C/W o C
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)...
