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STD3NK60Z - N-CHANNEL Power MOSFET

Datasheet Summary

Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Features

  • OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/15 STP3NK60Z.

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Datasheet Details

Part number STD3NK60Z
Manufacturer STMicroelectronics
File Size 604.05 KB
Description N-CHANNEL Power MOSFET
Datasheet download datasheet STD3NK60Z Datasheet
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Full PDF Text Transcription

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STP3NK60Z - STP3NK60ZFP STB3NK60Z-STD3NK60Z-STD3NK60Z-1 N-CHANNEL 600V - 3.3Ω - 2.4A TO-220/FP/D2PAK/DPAK/IPAK Zener-Protected SuperMESH™Power MOSFET TYPE STP3NK60Z STP3NK60ZFP STB3NK60Z STD3NK60Z STD3NK60Z-1 s s s s s s VDSS 600 600 600 600 600 V V V V V RDS(on) < 3.6 < 3.6 < 3.6 < 3.6 < 3.6 Ω Ω Ω Ω Ω ID 2.4 A 2.4 A 2.4 A 2.4 A 2.4 A Pw 45 W 20 W 45 W 45 W 45 W 1 3 2 TYPICAL RDS(on) = 3.3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY TO-220 1 3 TO-220FP D2PAK 3 1 1 3 2 DPAK IPAK DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.
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