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STD3NK60ZFP Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

Overview: STP3NK60Z - STP3NK60ZFP STB3NK60Z-STD3NK60Z-STD3NK60Z-1 N-CHANNEL 600V - 3.3Ω - 2.4A TO-220/FP/D2PAK/DPAK/IPAK Zener-Protected SuperMESH™Power MOSFET TYPE STP3NK60Z STP3NK60ZFP STB3NK60Z STD3NK60Z STD3NK60Z-1 s s s s s s VDSS 600 600 600 600 600 V V V V V RDS(on) < 3.6 < 3.6 < 3.6 < 3.6 < 3.6 Ω Ω Ω Ω Ω ID 2.4 A 2.4 A 2.4 A 2.4 A 2.4 A Pw 45 W 20 W 45 W 45 W 45 W 1 3 2 TYPICAL RDS(on) = 3.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

Key Features

  • OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/15 STP3NK60Z.

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