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STD3NK90ZFP - N-CHANNEL Power MOSFET

Download the STD3NK90ZFP datasheet PDF. This datasheet also covers the STD3NK90Z variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Key Features

  • OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/13 STP3NK90Z.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STD3NK90Z_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com STP3NK90Z - STP3NK90ZFP STD3NK90Z - STD3NK90Z-1 N-CHANNEL 900V - 4.1Ω - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH™Power MOSFET TYPE STP3NK90Z STP3NK90ZFP STD3NK90Z STD3NK90Z-1 VDSS 900 900 900 900 V V V V RDS(on) < 4.8 < 4.8 < 4.8 < 4.8 Ω Ω Ω Ω ID 3 3 3 3 A A A A Pw 90 W 25 W 90 W 90 W 3 1 2 TYPICAL RDS(on) = 4.1 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY TO-220 TO-220FP 3 1 1 3 2 DPAK IPAK DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.