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STD4N62K3 - Power MOSFET

General Description

These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure.

Key Features

  • Type STD4N62K3 STU4N62K3.
  • VDSS 620 V RDS(on) max < 1.95 Ω ID 3.8 A Pw 70 W 3 1 2 1 3 100% avalanche tested Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitances Improved diode reverse recovery characteristics Zener-protected DPAK IPAK Figure 1. Internal schematic diagram D(2).

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www.DataSheet4U.com STD4N62K3 STU4N62K3 N-channel 620 V, 1.8 Ω, 3.8 A SuperMESH3™ Power MOSFET DPAK, IPAK Preliminary data Features Type STD4N62K3 STU4N62K3 ■ ■ ■ ■ ■ ■ VDSS 620 V RDS(on) max < 1.95 Ω ID 3.8 A Pw 70 W 3 1 2 1 3 100% avalanche tested Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitances Improved diode reverse recovery characteristics Zener-protected DPAK IPAK Figure 1. Internal schematic diagram D(2) Application ■ Switching applications Description These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure.