Description
These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure.
Features
- Type STD4N62K3 STU4N62K3.
- VDSS 620 V
RDS(on) max < 1.95 Ω
ID 3.8 A
Pw 70 W
3 1 2 1 3
100% avalanche tested Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitances Improved diode reverse recovery characteristics Zener-protected
DPAK
IPAK
Figure 1.
Internal schematic diagram
D(2).
STD4N62K3 Datasheet
