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STD55N4F5 - Power MOSFETs

General Description

This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics unique “single feature size” strip-based process with less critical alignment steps and therefore a remarkable manufacturing reproducibility.

Key Features

  • Type STD55N4F5.
  • VDSS 40 V RDS(on) max < 10 mΩ ID 55 A Pw 60 W 3 1 Standard threshold drive 100% avalanche tested Surface mounting DPAK (TO-252) DPAK.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com STD55N4F5 N-channel 40 V, 7.1 mΩ, 40 A, DPAK STripFET™ V Power MOSFET Features Type STD55N4F5 ■ ■ ■ VDSS 40 V RDS(on) max < 10 mΩ ID 55 A Pw 60 W 3 1 Standard threshold drive 100% avalanche tested Surface mounting DPAK (TO-252) DPAK Applications ■ Switching applications – Automotive Figure 1. Internal schematic diagram Description This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics unique “single feature size” strip-based process with less critical alignment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and low gate charge. Table 1.