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STD5N52U - N-Channel Power MOSFET

General Description

This device is N-channel Power MOSFET developed using UltraFASTmesh technology, which combines the advantages of reduced on resistance, Zener gate protection and very high dv/dt capability with an enhanced fast body-drain recovery diode.

Key Features

  • Order code VDS STD5N52U 525 V.
  • Outstanding dv/dt capability.
  • Gate charge minimized.
  • Very low intrinsic capacitances.
  • Very low RDS(on).
  • Extremely low trr RDS(on) max. 1.50 Ω ID 4.4 A.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STD5N52U Datasheet N-channel 525 V, 1.25 Ω typ., 4.4 A, UltraFASTmesh Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G(1) S(3) Features Order code VDS STD5N52U 525 V • Outstanding dv/dt capability • Gate charge minimized • Very low intrinsic capacitances • Very low RDS(on) • Extremely low trr RDS(on) max. 1.50 Ω ID 4.4 A Applications • Switching applications AM01476v1_tab Description This device is N-channel Power MOSFET developed using UltraFASTmesh technology, which combines the advantages of reduced on resistance, Zener gate protection and very high dv/dt capability with an enhanced fast body-drain recovery diode.