STD790A Description
The device is manufactured in low voltage PNP Planar Technology by using a "Base Island" layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage. RATINGS Symbol V CBO V CER V EBO IC I CM P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (R BE = 47 Ω ) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t...